Peak or centroid - Which parameter is better suited for quantifying apparent marker locations in low-energy sputter depth profiling with reactive primary ion beams?

Surface and Interface Analysis

Volumn 31, Issue 9, 2001, Pages 893-896

  Wittmaack, K ^a   Hammerl, E ^b   Eisele, I ^b   Patel, S B ^c  

^a INSTITUTE OF EPIDEMIOLOGY   (Germany)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^c Atomika Instruments GmbH   (Germany)

Author keywords

Boron in silicon; Centroid; Peak shift; SIMS depth profiling

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); INTERFACIAL ENERGY; POSITIVE IONS; PROFILOMETRY; SECONDARY ION MASS SPECTROMETRY; SILICON; SPUTTER DEPOSITION;

REACTIVE PRIMARY ION BEAMS;

ION BEAMS;

EID: 0035445310     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1117     Document Type: Article

References (20)