Evaluation of the sputtering rate variation in SIMS ultra-shallow depth profiling using multiple short-period delta layers

Surface and Interface Analysis

Volumn 35, Issue 6, 2003, Pages 544-547

  Homma, Y ^a   Takenaka, H ^b   Toujou, F ^c   Takano, A ^b   Hayashi, S ^d   Shimizu, R ^e  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT Advanced Technology Corporation   (Japan)

^c Matsushita Technoresearch Inc   (Japan)

^d NIPPON STEEL CORPORATION   (Japan)

^e OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Delta layer; Reference material; Shallow depth profiling; Si; SIMS

Indexed keywords

DOPING (ADDITIVES); NITRIDES; SECONDARY ION MASS SPECTROMETRY; SILICON; SPUTTERING;

DELTA LAYER; REFERENCE MATERIAL; SHALLOW DEPTH PROFILING;

SURFACE TREATMENT;

EID: 0037789563     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1568     Document Type: Article

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