SIMS quantitative depth profiling of matrix elements in semiconductor layers

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 7208-7210

  Guryanov, G ^a   St Clair, T P ^a   Bhat, R ^a   Caneau, C ^a   Nikishin, S ^b   Borisov, B ^b   Budrevich, A ^c  

^a Science and Technology Division   (United States)

^b TEXAS TECH UNIVERSITY   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

Quantification; RBS; Semiconductor compound; SIMS; XPS

Indexed keywords

ALLOYS; DATA ACQUISITION; IONS; SECONDARY ION MASS SPECTROMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

QUANTIFICATION; RBS; SEMICONDUCTOR COMPOUND;

SEMICONDUCTOR DEVICES;

EID: 33747165878     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.254     Document Type: Article

References (4)

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3. Gao Y., Mitha S., Huang C., Clark-Phelps R., and Wang L. In: Gillen G., Lareau R., Stevie F., and Bennet J. (Eds). Proceeding of the 11th International Conference on SIMS. Orlando (1997) 193
4. Gu J., Steve F., Pivovarov A., and Griffis D. In: Gillen G., Hues S., and Lareau R. (Eds). Proceedings of 15th Annual Workshop on SIMS. Clearwater Beach, FL, USA (2002) 105