Quantification of SiGe layer composition using MCs + and MCs 2 + secondary ions in ToF-SIMS and magnetic SIMS

Applied Surface Science

Volumn 255, Issue 4, 2008, Pages 1412-1414

  Marseilhan, D ^a   Barnes, J P ^a   Fillot, F ^a   Hartmann, J M ^a   Holliger, P ^a  

^a CEA LETI   (France)

Author keywords

Caesium cluster detection; Silicon germanium; SIMS; ToF SIMS

Indexed keywords

GERMANIUM; IONS; MICROELECTRONICS; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY;

CAESIUM CLUSTER DETECTION; LINEAR CORRELATION; LINEAR RELATIONSHIPS; SECONDARY ION EMISSION; SECONDARY ION GENERATION; SEMICONDUCTING LAYER; SILICON GERMANIUM; TOF SIMS;

SI-GE ALLOYS;

EID: 56449099226     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.06.048     Document Type: Article

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