Very high growth rate of 4H-SiC using MTS as chloride-based precursor

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 115-118

  Pedersen, H ^a   Leone, S ^a,b   Henry, A ^a   Beyer, F C ^a   Darakchieva, V ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Caracal Inc   (United States)

Author keywords

Chloride based CVD growth; Epilayers; High growth rate

Indexed keywords

CHLORINE COMPOUNDS; EPILAYERS; EPITAXIAL GROWTH; ETHYLENE; SILICON CARBIDE;

C/SI RATIO; CHLORIDE-BASED CVD; CVD REACTORS; HIGH GROWTH RATE; LINEAR DEPENDENCE; METHYLTRICHLOROSILANE; MOLAR FRACTIONS; SINGLE PRECURSORS;

GROWTH RATE;

EID: 63849093205     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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