Film morphology and process conditions in epitaxial silicon carbide growth via chlorides route

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 93-96

  Masi, M ^a   Veneroni, A ^a   Fiorucci, A ^a   La Via, F ^b   Foti, G ^c   Mauceri, M ^d   Leone, S ^d   Pistone, G ^d   Condorelli, G ^d   Abbondanza, G ^d   Valente, G L ^e   Crippa, D ^e  

^a POLITECNICO DI MILANO   (Italy)

^b CNR IMM   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

^d C o BIC Sicilia Pantano d'Arci   (Italy)

^e LPE   (Italy)

Author keywords

Chemical kinetics; Chemical vapor deposition processes; Theory and models of film growth

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; FILM GROWTH; GROWTH KINETICS; REACTION KINETICS; SILICON CARBIDE; SURFACE ROUGHNESS;

CHEMICAL VAPOR DEPOSITION PROCESS; CRYSTALLINE STRUCTURE; DEPOSITION MODELING; EPITAXIAL SILICON CARBIDE; FILM MORPHOLOGY; HOT-WALL REACTORS; PROCESS CONDITION; THEORY AND MODELS;

MORPHOLOGY;

EID: 38449111119     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.93     Document Type: Conference Paper

References (10)

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