Silicon carbide growth mechanisms from SiH4, SiHCl3 and nC3H8

Crystal Research and Technology

Volumn 40, Issue 10-11, 2005, Pages 967-971

  Veneroni, A ^a   Omarini, F ^a   Masi, M ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

Crystal growth; Epitaxial deposition; Modelling; Silicon carbide

Indexed keywords

CHLORINATION; CRYSTAL GROWTH; REACTION KINETICS; SILANES; SILICON CARBIDE;

EPITAXIAL DEPOSITION; GROWTH MECHANISMS; GROWTH RATE; MODELING;

EPITAXIAL GROWTH;

EID: 27744448651     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200410469     Document Type: Conference Paper

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