In-situ surface preparation of nominally on-axis 4H-SiC substrates

Journal of Crystal Growth

Volumn 310, Issue 20, 2008, Pages 4430-4437

  Hassan, J ^a   Bergman, J P ^a   Henry, A ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. Atomic force microscopy; A1. Etching; A3. Chemical vapor deposition processes

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ETCHING; GEOPHYSICAL PROSPECTING; HYDROGEN; IMAGING TECHNIQUES; MICROSCOPIC EXAMINATION; NONMETALS; OPTICAL MICROSCOPY; PHOTORESISTS; SCANNING PROBE MICROSCOPY; SILICON; SILICON CARBIDE; SURFACE ROUGHNESS; SURFACE STRUCTURE;

4H-SIC SUBSTRATES; A1. ATOMIC FORCE MICROSCOPY; A1. ETCHING; A3. CHEMICAL VAPOR DEPOSITION PROCESSES; AMBIENT CONDITIONS; BEFORE AND AFTER; ETCH PITS; ETCHING CONDITIONS; ETCHING RATES; HOT-WALL CHEMICAL VAPOR DEPOSITION; IN-SITU; IN-SITU ETCHING; OPTICAL-; STEP HEIGHT; SURFACE PREPARATIONS; SURFACE STEPS; TAPPING MODE; TIME INTERVALS;

SURFACE MORPHOLOGY;

EID: 52149104246     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.083     Document Type: Article

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