On-axis homoepitaxial growth on Si-face 4H-SiC substrates

Journal of Crystal Growth

Volumn 310, Issue 20, 2008, Pages 4424-4429

  Hassan, J ^a   Bergman, J P ^a   Henry, A ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. Atomic force microscopy; A1. Etching; A3. Hot wall epitaxy; B2. Semiconducting materials; B3. Bipolar transistors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ECOLOGY; EPILAYERS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTICAL ENGINEERING; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE; SURFACE DEFECTS; SURFACE ROUGHNESS; SURFACES;

4H-SIC SUBSTRATES; A1. ATOMIC FORCE MICROSCOPY; A1. ETCHING; A3. HOT WALL EPITAXY; B2. SEMICONDUCTING MATERIALS; B3. BIPOLAR TRANSISTORS; BASAL PLANE DISLOCATION; GROWN LAYERS; GROWTH MECHANISMS; GROWTH PARAMETERS; HIGH-QUALITY; HOMOEPITAXIAL GROWTH; HOT-WALL CHEMICAL VAPOR DEPOSITION; IN-SITU; MORPHOLOGICAL DEFECTS; OFF-AXIS; OPTICAL-; POLYTYPE STABILITY; SURFACE PREPARATIONS;

SUBSTRATES;

EID: 52149108918     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.081     Document Type: Article

References (31)

1. Baliga B.J. Physics of Semiconductor Power Devices (1996), JWS Publishing
2. Matsunami H., and Kimoto T. Mater. Sci. Eng. R20 (1997) 125
3. Treu M., Rupp R., Brunner H., Dahlquist F., and Hecht Ch. Mater. Sci. Forum 981 (2004) 457
4. Bergman J.P., Lendenmann H., Nilsson P.A., Lindefelt U., and Skytt P. Mater. Sci. Forum 353-356 (2001) 299
5. Lendenmann H., Dahlquist F., Johansson N., Söderholm R., Nilsson P.A., Bergman J.P., and Skytt P. Mater. Sci. Forum 353-356 (2001) 727
6. Ha S., Mieszkowski P., Skowronski M., and Rowland L.B. J. Crystal Growth 257 (2002) 244
7. Ohno T., Yamaguchi H., Kuroda S., Kojima K., Suzuki T., and Arai K. J. Crystal Growth 260 (2004) 209
8. Zhang Z., Shrivastava A., and Sudarshan T.S. Mater. Sci. Forum 527-529 (2006) 419
9. Zhang Z., and Sudarshan T.S. Appl. Phys. Lett. 87 (2005) 161917
10. Sumakeris J.J., Bergman J.P., Das M.K., Hallin C., Hull B.A., Janzen E., Lendenmann H., O'Loughlin M.J., Paisley M.J., Ha S., Skowronski M., Palmour J.W., and Carter C.H. J. Mater. Sci. Forum 527-529 (2006) 141
11. Zhang Z., Moulton E., and Sudarshan T.S. Appl. Phys. Lett. 89 (2006) 81910
12. Kimoto T., Nishino H., Yoo W.S., and Matsunami H. J. Appl. Phys. 73 (1993) 726
13. Tsuchida H., Kamata I., and Nagano M. J. Crystal Growth 310 (2008) 757
14. Okada T., Kimoto T., Yamai K., Matsunami H., and Inoko F. Mater. Sci. Eng. A 361 (2003) 67
15. Nakamura S., Kimoto T., and Matsunami H. Mater. Sci. Forum 457-460 (2004) 163
16. Neudeck P.G., Powell J.A., Beheim G.M., Benavage E.L., Abel P.B., Trunek A.J., Spry D.J., Dudley M., and Vetter W.M. J. Appl. Phys. 92 (2002) 2391
17. Soueidana M., Ferroa G., Nsoulib B., Cauweta F., Molleta L., Jacquiera C., Younesc G., and Monteila Y. J. Crystal Growth 293 (2006) 433
18. Kimoto T., Chen Z.Y., Tamura S., Nakamura S., Onojima N., and Matsunami H. Jpn. J. Appl. Phys. 40 (2001) 3315
19. Kojima K., Okumura H., Kuroda S., and Arai K. J. Crystal Growth 269 (2004) 367
20. Augustine G., Hobgood H.M.C.D., Balakrishna V., Dunne G., and Hopkins R.H. Phys. Status Solidi B 137 (1997) 202
21. Nakamura S., Kimoto T., and Matsunami H. J. Crystal Growth 256 (2003) 341
22. Hallin C., Wahab Q., Ivanov I., Bergman J.P., and Janzén E. Mater. Sci. Forum 457-460 (2004) 193
23. Hassan J., Bergman J.P., Henry A., Pedersen H., J McNally P., and Janzen E. Mater. Sci. Forum 556-557 (2007) 53
24. Henry A., ul Hassan J., Bergman J.P., Hallin C., and Janzén E. Chem. Vap. Deposition 12 (2006) 475
25. J. Hassan, J.P. Bergman, A. Henry, E. Janzén, J. Crystal Growth, in press, doi:10.1016/j.crysgro.2008.06.083.
26. Ivanov I.G., Hallin C., Henry A., Kordina O., and Janzén E. J. Appl. Phys. 80 (1996) 3504
27. Powell J.A., Petit J.B., Edgar J.H., Jenkins I.G., Matus L.G., Yang J.W., Pirouz P., Choyke W.J., Clemen L., and Yoganathan M. Appl. Phys. Lett. 59 (1991) 333
28. S. Yu. Karpov, Yu. N. Makarov, M.S. Ramm, Silicon carbide and related materials 1995, in: Proceedings of the Sixth International Conference, 1996, pp. 177-80.
29. Neyret E., di Cioccio L., Blanquet E., Raffy C., Pudda C., Billon T., and Camassel J. J. Mater. Sci. Forum 338-342 (2000) 1041
30. Frank F.C. Acta Crystallogr. 4 (1951) 497
31. Pirouz P., Zhang M., McD Hobgood H., Lancin M., Douin J., and Pichaud B. Philos. Mag. 86 (2006) 4685