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Volumn 353-356, Issue , 2001, Pages 95-98
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Influence of the growth conditions on the layer parameters of 4H-SiC epilayers grown in a hot-wall reactor
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM;
BORON;
CHEMICAL REACTORS;
CHEMICAL VAPOR DEPOSITION;
COMPOSITION EFFECTS;
CRYSTAL ORIENTATION;
DOPING (ADDITIVES);
ELECTRIC CONDUCTIVITY;
EPITAXIAL GROWTH;
PRESSURE EFFECTS;
THICKNESS MEASUREMENT;
WALL FLOW;
DOPING LEVEL;
EPITAXIAL LAYERS;
GROWTH PARAMETERS;
HOT WALL REACTOR;
THICKNESS UNIFORMITY;
SILICON CARBIDE;
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EID: 0035127388
PISSN: 02555476
EISSN: None
Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/msf.353-356.95 Document Type: Article |
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Times cited : (13)
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References (3)
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