Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates

Journal of Crystal Growth

Volumn 311, Issue 12, 2009, Pages 3265-3272

  Leone, S ^a,b   Pedersen, H ^a   Henry, A ^a   Kordina, O ^b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Caracal Inc   (United States)

Author keywords

A1. Crystal morphology; A3. Chemical vapour deposition processes; B2. Semiconducting materials

Indexed keywords

4H-SIC SUBSTRATE; A1. CRYSTAL MORPHOLOGY; A3. CHEMICAL VAPOUR DEPOSITION PROCESSES; B2. SEMICONDUCTING MATERIALS; C/SI RATIO; KEY PARAMETERS; LOW GROWTH TEMPERATURE; MORPHOLOGY DEGRADATION; OFF-AXIS; OPTIMIZED PROCESS; PROCESS OPTIMIZATION; PROCESS PARAMETERS; STEP BUNCHING; TEMPERATURE RAMP; THICK LAYERS;

CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; EPILAYERS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GROWTH TEMPERATURE; HETEROJUNCTION BIPOLAR TRANSISTORS; MORPHOLOGY; OPTIMIZATION; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 66149190807     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.037     Document Type: Article

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