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Journal of the Electrochemical Society

Volumn 157, Issue 10, 2010, Pages

Optimization of a concentrated chloride-based CVD process for 4H-SiC epilayers

(5) Leone, S a Henry, A a Andersson, S a Kordina, O a Janzn E a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER FLOW; CVD PROCESS; GAS CARRIERS; GAS DISTRIBUTION; GAS FLOWS; GAS PHASE COMPOSITION; GAS SPEED; HOMOEPITAXIAL GROWTH; HYDROGENATED SILICON; LOW PRESSURES; OFF-ANGLE; OFF-AXIS; PROCESS PRESSURE; SIC EPILAYERS; SILICON INTERMEDIATES; SYSTEMATIC STUDY; THERMODYNAMIC CALCULATIONS; THICKNESS UNIFORMITY;

CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; GASES; GROWTH RATE; KNOWLEDGE BASED SYSTEMS; MORPHOLOGY; SILICON CARBIDE; SILICON WAFERS; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956192673 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3473813 Document Type: Article

Times cited : (9)

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