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Volumn 4, Issue 7, 2010, Pages 145-147

Differences between chloro-carbon and hydro-carbon precursors in low-temperature epitaxial growth of 4H-SiC

Author keywords

CVD; Epitaxy; Semiconductors; Structure and morphology; Thin films

Indexed keywords

C/SI RATIO; CARBON PRECURSORS; CHLOROMETHANE; CVD; EPILAYER QUALITY; HIGH GROWTH RATE; LOW TEMPERATURE EPITAXIAL GROWTH; LOW TEMPERATURES; LOWER BOUNDARY; POLYCRYSTALLINE; POLYTYPES; PROCESS WINDOW; STRUCTURE AND MORPHOLOGY; UPPER BOUNDARY;

EID: 77954772751     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004110     Document Type: Article
Times cited : (5)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.