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Volumn 4, Issue 7, 2010, Pages 145-147
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Differences between chloro-carbon and hydro-carbon precursors in low-temperature epitaxial growth of 4H-SiC
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Author keywords
CVD; Epitaxy; Semiconductors; Structure and morphology; Thin films
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Indexed keywords
C/SI RATIO;
CARBON PRECURSORS;
CHLOROMETHANE;
CVD;
EPILAYER QUALITY;
HIGH GROWTH RATE;
LOW TEMPERATURE EPITAXIAL GROWTH;
LOW TEMPERATURES;
LOWER BOUNDARY;
POLYCRYSTALLINE;
POLYTYPES;
PROCESS WINDOW;
STRUCTURE AND MORPHOLOGY;
UPPER BOUNDARY;
DEGRADATION;
EPITAXIAL GROWTH;
HYDROCARBONS;
MORPHOLOGY;
PROPANE;
SEMICONDUCTOR GROWTH;
SILICON CARBIDE;
THIN FILMS;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 77954772751
PISSN: 18626254
EISSN: 18626270
Source Type: Journal
DOI: 10.1002/pssr.201004110 Document Type: Article |
Times cited : (5)
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References (16)
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