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Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 103-106

Epitaxial growth of 4H-SiC with high growth rate using CH3Cl and SiCl4 chlorinated growth precursors

(3) Kotamraju, Siva a Krishnan, Bharat a Koshka, Yaroslav a

a MISSISSIPPI STATE UNIVERSITY (United States)

Author keywords

Chloromethane; Epitaxial growth; Halo carbon

Indexed keywords

CHLORINE COMPOUNDS; EPITAXIAL GROWTH; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

CARBON PRECURSORS; CHLOROMETHANE; CRYSTALLINE QUALITY; GROWTH PRECURSORS; HIGH RESOLUTION X RAY DIFFRACTION; HOMOGENOUS NUCLEATION; MORPHOLOGY DEGRADATION; SILICON TETRACHLORIDE;

GROWTH RATE;

EID: 77955440668 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.645-648.103 Document Type: Conference Paper

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.