Preparation and characterization of TaAlOx high-κ dielectric for metal-insulator-metal capacitor applications

Thin Solid Films

Volumn 519, Issue 1, 2010, Pages 423-429

  Hota, M K ^a   Mahata, C ^a   Bera, M K ^c   Mallik, S ^a   Sarkar, C K ^b   Varma, S ^d   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b JADAVPUR UNIVERSITY   (India)

^c Tokyo Institute of Technology ^*  (Japan)

^d INSTITUTE OF PHYSICS   (India)

Author keywords

Capacitance I; High dielectrics; Metal insulator metal structure; Radio frequency co sputtering; Tantalum aluminum oxide; X ray photoelectron spectroscopy

Indexed keywords

AMORPHOUS PHASE; BAND GAPS; CONSTANT CURRENT; CRYSTALLINITIES; DIELECTRIC THICKNESS; ELECTRICAL PROPERTY; EQUIVALENT OXIDE THICKNESS; HIGH RESOLUTION; HIGH-CAPACITANCE DENSITY; LOW-LEAKAGE CURRENT; METAL-INSULATOR-METAL CAPACITORS; METAL-INSULATOR-METAL STRUCTURE; MIM CAPACITORS; POST DEPOSITION ANNEALING; RADIO-FREQUENCY CO-SPUTTERING; RADIO-FREQUENCY MAGNETRON CO-SPUTTERING; SI(1 0 0); SURFACE CHEMICAL STATE; TEMPERATURE COEFFICIENT OF CAPACITANCE; THERMAL STABILITY; VOLTAGE COEFFICIENTS OF CAPACITANCES; VOLTAGE LINEARITY;

ALUMINUM; AMORPHOUS FILMS; CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; ELECTRONS; MAGNETRONS; METAL INSULATOR BOUNDARIES; METALS; OXIDE FILMS; OXIDES; PHOTOELECTRICITY; PHOTONS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR INSULATOR BOUNDARIES; TANTALUM; TANTALUM OXIDES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

MIM DEVICES;

EID: 77957706116     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.07.020     Document Type: Article

References (33)

1. P. Zurcher, P. Alluri, P. Chu, P. Duvallet, C. Happ, R. Henderson, J. Mendonca, M. Kim, M. Petras, M. Raymond, T. Remmel, D. Roberts, B. Steimle, J. Stipanuk, S. Straub, T. Sparks, M. Tarabbia, H. Thibieroz, and M. Miller Int. Electron Devices Meeting Tech. Dig 2000 153
2. S.J. Lee, H.F. Luan, C.H. Lee, T.S. Jeon, W.P. Bai, Y. Senzaki, D. Roberts, and D.L. Kwong Proc. Symp. VLSI Technol. 2001 133
3. S.B. Chen, J.H. Chou, A. Chin, J.C. Hsieh, and J. Liu IEEE Electron Device Lett. 23 2002 185
4. K.C. Tsai, W.F. Wu, C.G. Chao, and C.P. Kuanb J. Electrochem. Soc. 153 2006 G492
5. D.H. Triyoso, R.I. Hegde, S. Zollner, M.E. Ramon, S. Kalpat, R. Gregory, X.D. Wang, J. Jiang, M. Raymond, R. Rai, D. Werho, D. Roan, B.E. White Jr., and P.J. Tobin J. Appl. Phys. 98 2005 054104
6. K.M.A. Salam, H. Fukuda, and S. Nomura J. Appl. Phys. 93 2003 1169
7. J.Y. Tewg, Y. Kuo, J. Lu, and B. Schueler J. Electrochem. Soc. 151 2004 F59
8. J.Y. Tewg, Y. Kuo, and J. Lu Electrochem. Solid-State Lett. 8 2005 G27
9. Y. Kuo, J. Lu, and J.Y. Tewg Jpn. J. Appl. Phys. 42 2003 L769
10. G.D. Wilk, R.M. Wallace, and J.M. Anthony J. Appl. Phys. 89 2001 5243
11. W. Kern Handbook of Semiconductor Wafer Cleaning Technology: Science, Technology, and Applications 1993 Noyes, Park Ridge NJ
12. B.C. Donose, E. Taran, I.U. Vakarelski, H. Shinto, and K. Higashitani J. Colloid Interface Sci. 299 2006 233
13. A.Y. Mao, Y.M. Sun, J.M. White, and D.L. Kwong Mater. Res. Soc. Symp. Proc. 567 1999 489
14. The International Technology Roadmap for Semiconductors (ITRS) (Semiconductor Industry Association, 2008), Table RFAMS3 On-Chip Passives Technology Requirements, http://www.itrs.net/Links/2008ITRS/Home2008.htm.
15. K.C. Chiang, C.C. Huang, H.C. Pan, C.N. Hsiao, J.W. Lin, I.J. Hsieh, C.H. Cheng, C.P. Chou, A. Chin, H.L. Hwang, and S.P. McAlister J. Electrochem. Soc. 154 2007 G54
16. S. Bécu, S. Crémer, and J.L. Autran Appl. Phys. Lett. 88 2006 052902
17. S. Blonkowski, M. Regache, and A. Halimaoui J. Appl. Phys. 90 2001 1501
18. P. Gonon, and C. Vallée Appl. Phys. Lett. 90 2007 142906
19. J.L. Gavartin, D.M. Ramo, A.L. Shluger, G. Bersuker, and B.H. Lee Appl. Phys. Lett. 89 2006 082908
20. R. Meyer, R. Liedtke, and R. Waser Appl. Phys. Lett. 86 2005 112904
21. C.H. Cheng, H.C. Pan, H.J. Yang, C.N. Hsiao, C.P. Chou, S.P. McAlister, and A. Chin IEEE Electron Device Lett. 28 2007 1095
22. D. Brassard, L. Ouellet, and M.A. Khakani IEEE Electron Device Lett. 28 2007 261
23. K.C. Chiang, C.H. Cheng, H.C. Pan, C.N. Hsiao, C.P. Chou, A. Chin, and H.L. Hwang IEEE Electron Device Lett. 28 2007 235
24. N. Gaillard, L. Pinzelli, M.G. Jean, and A. Bsiesy Appl. Phys. Lett. 89 2006 133506
25. Y.S. Kim, Y.H. Lee, K.M. Lim, and M.Y. Sung Appl. Phys. Lett. 74 1999 2800
26. C. Mahata, M.K. Bera, M.K. Hota, T. Das, S. Mallik, B. Majhi, S. Varma, P.K. Bose, and C.K. Maiti Microelectron. Eng. 86 2009 2180
27. C.C. Hung, A.S. Oates, H.C. Lin, Y.P. Chang, J.L. Wang, C.C. Huang, and Y.W. Yau IEEE Trans. Device Mater. Reliab. 7 2007 462
28. C. Besset, S. Bruyeere, S. Blonkowski, S. Creemer, and E. Vincent Microelectron. Reliab. 43 2003 1237
29. H. Hu, C. Zhu, Y.F. Lu, M.F. Li, B.J. Cho, and W.K. Choi IEEE Electron Devices Lett. 23 2002 514
30. K.C. Chiang, J.W. Lin, H.C. Pan, C.N. Hsiao, W.J. Chen, H.L. Kao, I.J. Hsieh, and A. Chin J. Electrochem. Soc. 154 2007 H214
31. C.H. Cheng, S.H. Lin, K.Y. Jhou, W.J. Chen, C.P. Chou, F.S. Yeh, J. Hu, M. Hwang, T. Arikado, S.P. McAlister, and Albert Chin IEEE Electron Devices Lett. 29 2008 845
32. S.J. Kim, B.J. Cho, M.F. Li, S.J. Ding, M.B. Yd, C. Zhu, A. Chin, and D.L. Kwong VLSl Tech. Dig. 2004 218
33. M.Y. Yang, C.H. Huang, A. Chin, C. Zhu, M.F. Li, and D.L. Kwong IEEE Electron Devices Lett. 24 2003 306