Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode

IEEE Electron Device Letters

Volumn 28, Issue 12, 2007, Pages 1095-1097

  Cheng, C H ^a   Pan, H C ^b   Yang, H J ^a   Hsiao, C N ^b   Chou, C P ^a   McAlister, S P ^c   Chin, Albert ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

High ; High temperature techniques; Ir; Metal insulator metal (MIM); MIM devices; TiLaO

Indexed keywords

CAPACITORS; DENSITY (SPECIFIC GRAVITY); DIELECTRIC MATERIALS; ELECTRODES; HIGH TEMPERATURE PROPERTIES; LEAKAGE CURRENTS;

DENSITY CAPACITORS; METAL-INSULATOR-METAL CAPACITORS;

MIM DEVICES;

EID: 36648998773     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.909612     Document Type: Article

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