Thermal and chemical instability between iridium gate electrode and Ta2O5 gate dielectrics

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 489-494

  Mao, A Y ^a   Sun, Y M ^a   White, J M ^a   Kwong, D L ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; GRAIN BOUNDARIES; INTERFACES (MATERIALS); IRIDIUM; OXIDATION; SEMICONDUCTING SILICON; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY; VACUUM APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL STABILITY; IRIDIUM FILM; IRIDIUM GATE ELECTRODE; TANTALUM PENTOXIDE FILM; VACUUM ANNEALING;

ULTRATHIN FILMS;

EID: 0033323646     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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4. K. -A. Son, A. Y. Mao, Y. -M. Sun et al., Appl. Phys. Lett. 72 (10), 1187-1189 (1998).
5. C. D. Wagner, W. M. Riggs, L. E. Davis et al., Handbook of X-ray Photoelectron Spectroscopy (Perkin-Elmer Corporation, Physical Electronics Division, Eden Prairie, MN, 1979).
6. 2O oxidation kinetics of ultra thin thermally grown silicon nitride: An angle resolved x-ray photoelectron spectroscopy study," presented at the Materials Research Society 1999 Spring Meeting, San Francisco, CA, 1999 (unpublished).