High performance TaYOx-based MIM capacitors

Microelectronic Engineering

Volumn 86, Issue 11, 2009, Pages 2180-2186

  Mahata, C ^a   Bera, M K ^b   Hota, M K ^a   Das, T ^a   Mallik, S ^a   Majhi, B ^a   Verma, S ^c   Bose, P K ^d   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c INSTITUTE OF PHYSICS   (India)

^d JADAVPUR UNIVERSITY   (India)

Author keywords

High k dielectric; MIM capacitor; RF sputter deposition; TaYOx

Indexed keywords

AMORPHOUS PHASE; ATOMIC PERCENTAGE; CONSTANT CURRENT; CRYSTALLINITIES; DEVICE RELIABILITY; DIELECTRIC BREAKDOWN VOLTAGES; DIELECTRIC THICKNESS; EDX ANALYSIS; ELECTRICAL PERFORMANCE; ELECTRICAL PROPERTY; ENERGY DISPERSIVE X-RAY; ENERGY STORAGE DENSITY; HIGH-CAPACITANCE DENSITY; HIGH-K DIELECTRIC; METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITOR; MIM CAPACITORS; POST DEPOSITION ANNEALING; RF SPUTTER DEPOSITION; RF-MAGNETRON CO-SPUTTERING; SI(1 0 0); TAYOX; TEMPERATURE COEFFICIENT OF CAPACITANCE; ULTRA-THIN; VOLTAGE COEFFICIENTS OF CAPACITANCES; XRD;

CAPACITANCE; CAPACITORS; DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; METAL ANALYSIS; METAL INSULATOR BOUNDARIES; MIM DEVICES; PHOTODEGRADATION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; TANTALUM; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 69549105833     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.025     Document Type: Article

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