Tantalum nitride interface layer influence on dielectric properties of hafnium doped tantalum oxide high dielectric constant thin films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 7 A, 2003, Pages

  Kuo, Yue ^a   Lu, Jiang ^a   Tewg, Jun Yen ^a  

^a Texas AandM University   (United States)

Author keywords

Hafnium doped tantalum oxide; High k dielectric; Interface; TaNx interface; Tantalum oxide

Indexed keywords

ANNEALING; CHEMICAL BONDS; DOPING (ADDITIVES); INTERFACES (MATERIALS); PERMITTIVITY; TANTALUM COMPOUNDS;

BREAKDOWN STRENGTH;

THIN FILMS;

EID: 0041864046     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l769     Document Type: Article

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