The effect of Al-Ta2O5 topographic interface roughness on the leakage current of Ta2O5 thin films

Applied Physics Letters

Volumn 74, Issue 19, 1999, Pages 2800-2802

  Kim, Y S ^a   Lee, Y H ^a,b   Lim, K M ^a   Sung, M Y ^a  

^a Korea University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT DISTRIBUTION; ELECTRIC FIELDS; ELECTRIC INSULATING MATERIALS; INTERFACES (MATERIALS); SURFACE ROUGHNESS; TANTALUM COMPOUNDS;

TANTALUM PENTOXIDE;

DIELECTRIC FILMS;

EID: 0032621915     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124018     Document Type: Article

References (9)

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