MIM capacitance variation under electrical stress

Microelectronics Reliability

Volumn 43, Issue 8, 2003, Pages 1237-1240

  Besset, C ^a   Bruyere S ^a   Blonkowski, S ^a   Cremer S ^a   Vincent, E ^a  

^a STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC CHARGE; PERMITTIVITY; STRESS ANALYSIS;

ELECTRICAL STRESSES;

MIM DEVICES;

EID: 0042665519     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00177-X     Document Type: Conference Paper

References (4)

1. Coelho R. Propriétés des dielectriques. Hermès; 1990.
2. Vincent E. Dielectric reliability in deep-submicron technologies: from to ultrathin oxides. Microelectron Reliab. 37:1997;1499.
3. Kamoulakos G. Unified model for breakdown in thin and ultrathin gate oxides (12-5 nm). J. Appl. Phys. 86:1999;5131.
4. Lide D.R. Handbook of chemistry and physics. 76th ed. 1995;CRC Press, Boca Raton, FL. p. 9-44.