High density and low leakage current in TiO2 MIM capacitors processed at 300°C

IEEE Electron Device Letters

Volumn 29, Issue 8, 2008, Pages 845-847

  Cheng, C H ^a   Lin, S H ^b   Jhou, K Y ^a   Chen, W J ^c   Chou, C P ^a   Yeh, F S ^b   Hu, Jim ^d   Hwang, M ^d   Arikado, T ^d   McAlister, Sean P ^e   Chin, Albert ^a,f  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^d TOKYO ELECTRON LTD   (Japan)

^e NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^f Nano Electronics Consortium of Taiwan   (Taiwan)

Author keywords

High ; Ir; Metal insulator metal (MIM); TiO2

Indexed keywords

LEAKAGE CURRENTS;

HIGH-DENSITY; LOW LEAKAGE CURRENT;

CURRENT DENSITY;

EID: 48749083398     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000833     Document Type: Article

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