High-reliability Ta 2O 5 metal-insulator-metal capacitors with Cu-based electrodes

Journal of the Electrochemical Society

Volumn 153, Issue 5, 2006, Pages

  Tsai, Kou Chiang ^a   Wu, Wen Fa ^b,c   Chao, Chuen Guang ^a   Kuan, Cheng Ping ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c ELECTROCHEMICAL SOCIETY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALTACUTA; CU-BASED ELECTRODE; LEAKAGE CURRENT DENSITY; TANTALUM CONTACT;

COPPER; CURRENT DENSITY; ELECTROCHEMICAL ELECTRODES; LEAKAGE CURRENTS; RELIABILITY; TANTALUM COMPOUNDS; ULTRATHIN FILMS;

MOS CAPACITORS;

EID: 33645683828     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2185283     Document Type: Article

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