High temperature operation of AlGaN/GaN HEMT

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 507-510

  Adachi, Nobuo ^a   Tateno, Yasunori ^a   Mizuno, Shinya ^a   Kawano, Akihiro ^a   Nikaido, Junichiro ^a   Sano, Seigo ^a  

^a Sumitomo Electric Device Innovations USA   (Japan)

Author keywords

HEMT; High temperature; Power amplifiers

Indexed keywords

CHANNEL CAPACITY; ELECTRON VELOCITY ANALYZERS; EQUIVALENT CIRCUITS; GALLIUM NITRIDE; HIGH TEMPERATURE OPERATIONS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

CHANNEL TEMPERATURE; EQUIVALENT CIRCUIT VALUES; POWER ADDED EFFICIENCY; TEMPERATURE DEPENDENCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33746639137     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516642     Document Type: Conference Paper

References (5)

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