AlGaN/GaN MOSHEMTs with liquid-phase-deposited TiO 2 as gate dielectric

IEEE Transactions on Electron Devices

Volumn 56, Issue 12, 2009, Pages 2911-2916

  Wu, Tsu Yi ^a   Lin, Shun Kuan ^a   Sze, Po Wen ^b   Huang, Jian Jiun ^a   Chien, Wei Chi ^a   Hu, Chih Chun ^a   Tsai, Ming Ji ^a   Wang, Yeong Her ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KAO YUAN UNIVERSITY   (Taiwan)

Author keywords

AlGaN GaN; GaN; MOSHEMT

Indexed keywords

ALGAN/GAN; BREAKDOWN FIELD; CURRENT COLLAPSE; DIELECTRIC LAYER; ELECTRICAL CHARACTERISTIC; GAN; GAN LAYERS; GATE LEAKAGE CURRENT DENSITY; GATE METALS; GATE VOLTAGE SWING; LIQUID-PHASE DEPOSITION; MAXIMUM TRANSCONDUCTANCE; MOS STRUCTURE; MOSHEMT; N-DOPED; ROOM TEMPERATURE; TIO;

GALLIUM NITRIDE; LIQUIDS; TITANIUM DIOXIDE;

GATE DIELECTRICS;

EID: 77956215945     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2032745     Document Type: Article

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