Indium-tin-oxide metal-insulator-semiconductor GaN ultraviolet photodetectors using liquid-phase-deposition oxide

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 8 A, 2007, Pages 5119-5121

  Yang, Gow Huei ^a   Hwang, Jun Dar ^a   Lan, Chih Hsueh ^b   Chan, Chien Mao ^a   Chen, Hone Zem ^c   Chang, Shoou Jinn ^b  

^a DA YEH UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c HSIUPING INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

GaN; Indium tin oxide; Liquid phase deposition; Photodetector; Responsivity; SiO2

Indexed keywords

GALLIUM NITRIDE; INDIUM COMPOUNDS; LIQUID PHASE EPITAXY; MISFET DEVICES; SUPERSATURATION;

DEFECT ASSISTED TUNNELING; LIQUID PHASE DEPOSITION; RESPONSIVITY;

ULTRAVIOLET DETECTORS;

EID: 34547854361     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.5119     Document Type: Article

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