Measurement of drift mobility in AIGaN/GaN heterostructure field-effect transistor

Applied Physics Letters

Volumn 74, Issue 25, 1999, Pages 3890-3892

  Dang, X Z ^a   Asbeck, P M ^a   Yu, E T ^a   Sullivan, G J ^b   Chen, M Y ^b   McDermott, B T ^b   Boutros, K S ^c   Redwing, J M ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b ROCKWELL SCIENCE CENTER   (United States)

^c Epitronics/ATM1   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFET);

FIELD EFFECT TRANSISTORS;

EID: 0032620143     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124214     Document Type: Article

References (15)

1. Q. Chen, J. W. Yang, R. Gaska, M. Asif Khan, M. S. Shur, G. J. Sullivan, A. L. Sailor, J. A. Higgins, A. T. Ping, and I. Adesida, IEEE Electron Device Lett. 19, 44 (1998).
2. G. J. Sullivan, M. Y. Chen, J. A. Higgins, J. W. Yang, Q. Chen, R. L. Pierson, and B. T. McDermott, IEEE Electron Device Lett. 19, 198 (1998).
3. Y. F. Wu, B. P. Keller, P. Fini, S. Keller, T. J. Jenkins, L. T. Kehias, S. P. Denbaars, and U. K. Mishra, IEEE Electron Device Lett. 19, 50 (1998).
4. S. C. Binari, J. M. Redwing, G. Kelner, and W. Kruppa, Electron. Lett. 33, 242 (1997).
5. E. T. Yu, G. J. Sullivan, P. M. Asbeck, C. D. Wang, D. Qiao, and S. S. Lau, Appl. Phys. Lett. 71, 2794 (1997).
6. G. L. Snider, computer program ID Poisson/Schrödinger: a band diagram calculator, University of Notre Dame, Notre Dame, IN, 1995.
7. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 440.
8. M. Asif Khan, Q. Chen, C. J. Sun, M. S. Shur, and B. L. Gelmont, Appl. Phys. Lett. 67, 1429 (1995).
9. J. M. Redwing, M. A. Tischler, J. S. Flynn, S. Elhamri, M. Ahouija, R. S. Newrock, and W. C. Mitchel, Appl. Phys. Lett. 69, 963 (1996).
10. R. Oberhuber, G. Zandler, and P. Vogl, Appl. Phys. Lett. 73, 818 (1998).
11. K. Hirakawa and H. Sakaki, Phys. Rev. B 33, 8291 (1986).
12. P. J. Price, Surf. Sci. 143, 145 (1984).
13. L. Hsu and W. Walukiewicz, Phys. Rev. B 56, 1520 (1997).
14. M. Shur, B. Gelmont, and M. Asif Khan, J. Electron. Mater. 25, 777 (1996).
15. T. Ohori, S. Ohkubo, K. Kasai, and J. Komeno, J. Appl. Phys. 75, 3681 (1994).