High power GaN-HEMT for wireless base station applications

IEICE Transactions on Electronics

Volumn E89-C, Issue 5, 2006, Pages 608-614

  Kikkawa, Toshihide ^a,b   Joshin, Kazukiyo ^a,b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b IEEE

Author keywords

Amplifier; Base station; GaN; HEMT; W CDMA

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; POWER AMPLIFIERS; SIGNAL PROCESSING;

3-INCH SIC SUBSTRATE; BASE STATION; GAN; W-CDMA;

GALLIUM NITRIDE;

EID: 33646778479     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e89-c.5.608     Document Type: Article

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