Suppression of gate leakage current in GaN MOS devices by passivation with photo-grown Ga2O3

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2291-2294

  Wu, H M ^a   Peng, L H ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC-RATIO ANALYSIS; INTERFACIAL STATE; LEAKAGE CURRENT DENSITY; WET ETCHING; 73.40.QV; 81.05.EA; 81.65.CF; 82.45.UN; 82.80.PV; 85.30.TV;

ELECTRIC BREAKDOWN; ETCHING; GALLIUM NITRIDE; INTERFACIAL ENERGY; MOS DEVICES; PASSIVATION; X RAY PHOTOELECTRON SPECTROSCOPY; EMISSION SPECTROSCOPY; WET ETCHING;

LEAKAGE CURRENTS; MOS DEVICES;

EID: 33746358834     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565272     Document Type: Conference Paper

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