Growth and electrical characteristics of liquid-phase deposited SiO2 on Ge

Electrochemical and Solid-State Letters

Volumn 6, Issue 2, 2003, Pages

  Hsu, B C ^a   Hua, W C ^a   Shie, C R ^a   Chen, K F ^a   Liu, C W ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC CURRENTS; GROWTH (MATERIALS); MOS DEVICES; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DIODES; SUBSTRATES; SURFACE ROUGHNESS;

HYDROFLUOROSILICIC ACID; LIQUID PHASE DEPOSITION; METAL OXIDE SEMICONDUCTOR TUNNELING DIODE; SILICIC ACID; TUNNELING CURRENT;

SILICA;

EID: 0037320098     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1530030     Document Type: Article

References (20)

1. P. Kringhoj, A. N. Larsen, and S. Y. Shirayev, Phys. Rev. Lett., 76, 3372 (1996).
2. K. Rajendran and W. Schoenmaker, J. Appl. Phys., 89, 980 (2001).
3. F. Sato, T. Hashimoto, T. Tatsumi, and T. Tashiro, IEEE Trans. Electron Devices, 42, 483 (1995).
4. Z.-Y. Cheng, M. T. Currie, C. W. Leitz, G. Taraschi, E. A. Fitzgerald, J. L. Hoyt, and D. A. Antoniadas, IEEE Electron Device Lett., 22, 321 (2001).
5. T. Mizuno, N. Sugiyama, T. Tezuka, and S.-i. Takagi, Appl. Phys. Lett., 80, 601 (2002).
6. T. Homma, T. Katah, Y. Yamada, and Y. Murao, J. Electrochem. Soc., 140, 2410 (1993).
7. J.-S. Chou and S.-C. Lee, J. Electrochem. Soc., 141, 3214 (1994).
8. N. Nagayama, H. Honda, and H. Kawahara, J. Electrochem. Soc., 135, 2013 (1988).
9. T. Goda, N. Nagayama, A. Hishinuma, and H. Kawahara, Mater. Res. Soc. Symp. Proc., 105, 283 (1988).
10. A. Hishinuma, T. Goda, and M. Kitaoka, Appl. Surf. Sci., 49, 405 (1991).
11. S. Yoshitomi, S. Tomioka, and N. Haneji, Appl. Surf. Sci., 50, 22 (1992).
12. C.-F. Yeh, C.-L. Chen, and G.-H. Lin, J. Electrochem. Soc., 141, 3177 (1994).
13. J.-S. Chou and S.-C. Lee, Appl. Phys. Lett., 64, 1971 (1994).
14. S. Watanabe, N. Nakayama, and T. Ito, Appl. Phys. Lett., 59, 1458 (1991).
15. B.-C. Hsu, C. W. Liu, W. T. Liu, and C.-H. Lin, IEEE Trans. Electron Devices, 48, 1047 (2001).
16. C. G. Van de Walle and R. M. Martin, Phys. Rev. B, 34, 5621 (1986).
17. K. F. Brennan and A. S. Brown, Theory of Modern Electronic Semiconductor Devices, p. 436, John Wiley & Sons, New York (2002).
18. V. Dallacasa and C. Paracchini, Phys. Rev. B, 34, 8967 (1986).
19. V. Dallacasa and C. Paracchini, IEEE Trans. Electr. Insul., EI-22, 467 (1987).
20. K. J. Yang and C. Hu, IEEE Trans. Electron Devices, 46, 1500 (1999).