A low-leakage and reduced current collapse AlGaN/GaN heterojunction field effect transistor with AlOx gate insulator formed by metal-organic chemical vapor deposition

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1986-1988

  Sazawa, H ^a,b   Nishikawa, N ^b   Honda, Y ^b   Hata, M ^b   Yagi, S ^c   Shimizu, M ^d   Okumura, H ^c   Sakurai, T ^a   Akimoto, K ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b SUMITOMO CHEMICAL CO LTD   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; ALGAN/GAN HETEROJUNCTION; BUTYL ETHER; CURRENT COLLAPSE; DIRECT CURRENT; FABRICATED DEVICE; FLOWING GAS; GATE INSULATOR; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; INTERFACE FORMATION; METAL-INSULATOR-SEMICONDUCTORS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MIS-HFET; MOCVD; N VACANCY; OXIDE FORMATION; PREPARATION METHOD; THREE ORDERS OF MAGNITUDE; TRIMETHYLALUMINUM;

ELECTRIC CURRENT MEASUREMENT; ETHERS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; INDUSTRIAL CHEMICALS; LEAD OXIDE; METAL INSULATOR BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIS DEVICES; ORGANIC CHEMICALS; SWITCHING CIRCUITS;

DRAIN CURRENT;

EID: 68849123703     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778652     Document Type: Conference Paper

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