Improvement of impact ionization effect and subthreshold current in InAlAs/InGaAs metal-oxide-semiconductor metamorphic HEMT with a liquid-phase oxidized InAlAs as gate insulator

IEEE Transactions on Electron Devices

Volumn 54, Issue 3, 2007, Pages 418-424

  Lee, Kuan Wei ^a,b   Lee, Kai Lin ^a   Lin, Xian Zheng ^a   Tu, Chao Hsien ^a   Wang, Yeong Her ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b I SHOU UNIVERSITY   (Taiwan)

Author keywords

Gate dielectric; High electron mobility transistor (HEMT); Liquid phase oxidation; Metal oxide semiconductor (MOS); Metamorphic

Indexed keywords

ELECTRIC BREAKDOWN; GATE DIELECTRICS; GATES (TRANSISTOR); IMPACT IONIZATION; MOS DEVICES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; THRESHOLD CURRENT DENSITY;

GATE INSULATOR; LIQUID-PHASE OXIDATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33947725944     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.890599     Document Type: Article

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