Modeling and characterization of program / erasure speed and retention of TiN-gate MANOS (Si-Oxide-SiNx-Al2O3-Metal gate) cells for NAND flash memory

2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW

Volumn , Issue , 2007, Pages 83-84

  Choi, Eun Seok ^a   Yoo, Hyun Seung ^a   Park, Kyoung Hwan ^a   Kim, Se Jun ^a   Ahn, Jung Ryul ^a   Lee, Myung Shik ^a   Hong, Young Ok ^a   Kim, Suk Goo ^a   Om, Jae Chul ^a   Joo, Moon Sig ^a   Pyi, Seung Ho ^a   Lee, Seaung Suk ^a   Lee, Seok Kiu ^a   Bae, Gi Hyun ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 48649091137     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2007.4290591     Document Type: Conference Paper

References (4)

1. Y.Park et al., IEDM Tech. Dig., pp.1-4, 2006.
2. C.Lee et al., IEEE NVSMW pp.54-55, 2006.
3. Y.Wang et al., Solid-State Elec., Vol.49(1), pp.97-107, 2005.
4. K.Nasyrov et al., J.Exp.erimental and Theoretical Phys., Vol.102(5), pp.810-820, 2006.