Experimental and simulation analysis of program/retention transients in silicon nitride-based NVM cells

IEEE Transactions on Electron Devices

Volumn 56, Issue 9, 2009, Pages 1980-1990

  Vianello, Elisa ^a   Driussi, Francesco ^a   Arreghini, Antonio ^b,c   Palestri, Pierpaolo ^a   Esseni, David ^a   Selmi, Luca ^a   Akil, Nader ^c,d   van Duuren, Michiel J ^c   Golubović, Dusan S ^c  

^a UNIVERSITY OF UDINE   (Italy)

^b IMEC   (Belgium)

^c NXP TSMC Research Center   (Belgium)

^d Photovoltech NV   (Belgium)

Author keywords

Modeling; Silicon nitride; TANOS SONOS; Transport and trapping properties

Indexed keywords

APRIORI; CHARACTERIZATION TECHNIQUES; DRIFT DIFFUSION TRANSPORT; GATE STACKS; IMPROVED MODELS; MODEL PARAMETERS; MODELING; NON-VOLATILE MEMORIES; SIMULATION ANALYSIS; SPATIAL DISTRIBUTION; TANOS/SONOS; TRANSPORT AND TRAPPING PROPERTIES; TRAPPED CHARGE;

ELECTRON MOBILITY; SIZE DISTRIBUTION; TRANSIENTS;

SILICON NITRIDE;

EID: 69549110934     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2026113     Document Type: Article

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