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Applied Surface Science

Volumn 256, Issue 22, 2010, Pages 6887-6892

Deposition of hydrogenated amorphous carbon nitride films by dielectric barrier discharge plasmas

(6) Niu, Jinhai a Zhang, Lianlian a,b Zhang, Zhihui c Liu, Dongping a Liu, Yanhong b Feng, Zhiqing a

a DALIAN NATIONALITIES UNIVERSITY (China)

b DALIAN UNIVERSITY OF TECHNOLOGY (China)

c Dalian Railway Medical School (China)

Author keywords

AFM; Dielectric barrier discharge; FTIR; Hydrogenated amorphous carbon nitride films; XPS

Indexed keywords

AMORPHOUS CARBON; ATOMIC FORCE MICROSCOPY; CARBON FILMS; CARBON NITRIDE; DEPOSITION RATES; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC DISCHARGES; FILM GROWTH; FLOW CONTROL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; NITRIDES; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

BONDING STRUCTURE; DIELECTRIC BARRIER DISCHARGE PLASMAS; DIELECTRIC BARRIER DISCHARGES; DISCHARGE PRESSURES; FTIR; HYDROGENATED AMORPHOUS CARBON NITRIDE; PLASMA PARAMETER; PROPERTIES OF DEPOSITED FILMS;

AMORPHOUS FILMS;

EID: 77955665381 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2010.04.106 Document Type: Article

Times cited : (13)

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