Surface properties of silicon oxide films deposited using low-pressure dielectric barrier discharge

Applied Surface Science

Volumn 255, Issue 17, 2009, Pages 7708-7712

  Yin, Yejun ^a,b   Liu, Dongping ^a   Li, Dongming ^b   Gu, Jiandong ^a,b   Feng, Zhiqing ^a   Niu, Jinhai ^a   Benstetter, Guenther ^c   Zhang, Sam ^d  

^a DALIAN NATIONALITIES UNIVERSITY   (China)

^b DALIAN JIAOTONG UNIVERSITY   (China)

^c DEGGENDORF INSTITUTE OF TECHNOLOGY   (Germany)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Conductive atomic force microscopy; SiO 2 films; XPS

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONDUCTIVE FILMS; DEPOSITION RATES; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC DISCHARGES; FLOW CONTROL; OXIDANTS; OXIDE FILMS; SILICA; SILICON OXIDES; SURFACE PROPERTIES; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

CONDUCTIVE AFM; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CONDUCTIVE SURFACES; FIELD EMISSION PROPERTY; FILM DEPOSITION RATES; GAS PHASE COMPOSITION; LOW SURFACE ROUGHNESS; SIO2 FILM;

GAS PERMEABLE MEMBRANES;

EID: 66049104797     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.04.142     Document Type: Article

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