Sb-HEMT: Toward 100-mV cryogenic electronics

IEEE Transactions on Electron Devices

Volumn 57, Issue 8, 2010, Pages 1903-1909

  Noudélviwa, Albert ^a   Roelens, Yannick ^a   Danneville, Fraçnois ^a   Olivier, Aurélien ^a   Wichmann, Nicolas ^b   Waldhoff, Nicolas ^a   Lepilliet, Sylvie ^a   Dambrine, Gilles ^a   Desplanque, Ludovic ^a   Wallart, Xavier ^a   Moschetti, Giuseppe ^c   Grahn, Jan ^c   Bollaert, Sylvain ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b UNIV LILLE   (France)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Antimonide based compound semiconductor; cryogenic electronics; high electron mobility transistors (HEMTS); III V semiconductors; impact ionization; INAS ALSB; low power electronics

Indexed keywords

ANTIMONIDE BASED COMPOUND SEMICONDUCTORS; CRYOGENIC ELECTRONICS; CRYOGENIC TEMPERATURES; DC BIASING; II-IV SEMICONDUCTORS; LOW POWER; ROOM TEMPERATURE; ULTRA-LOW POWER;

CRYOGENICS; DC POWER TRANSMISSION; ELECTRON MOBILITY; IMPACT IONIZATION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PARTICLE DETECTORS; POWER ELECTRONICS; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77955176242     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2050109     Document Type: Article

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