0.1 μm In0.2Al0.8Sb-InAs HEMT low-noise amplifiers for ultralow-power applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 617-620

  Chou, Y C ^a   Lange, M D ^a   Bennett, B R ^b   Boos, J B ^b   Yang, J M ^a   Papanicolaouu, N A ^b   Lin, C H ^a   Lee, L J ^a   Nam, P S ^a   Gutierrez, A L ^a   Farkas, D S ^a   Tsai, R S ^a   Wojtowicz, M ^a   Chin, T P ^a   Oki, A K ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES;

EID: 50249092731     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419015     Document Type: Conference Paper

References (11)

1. J. B. Boos, W. Kruppa, B. R. Bennett, D. Park, S. W. Kirchoefer, R. Bass, and H. B. Dietrich, "AlSb/InAs HEMTs for Low-Voltage, High-Speed Applications," Vol. 45, pp. 1869-1875, 1998.
2. W. R. Deal, R. Tsai, M. D. Lange, J. B. Boos, B. R. Bennett, and A. Gutierrez, "A Low Power/Low Noise MMIC Amplifiers for Phased-Array Applications Using InAs/AlSb HEMT," the Technical Digest of IEEE IMS Symposium, pp. 2051-2054, 2006.
3. B. Y. Ma, J. B. Hacker, J. Bergman, P. Chen, G. Sullivan, G. Nagy, and B. Brar, "Ultra-Low-Power Wideband High Gain InAs/AlSb HEMT Low Noise Amplifiers," the Technical Digest of IEEE IMS Symposium, pp. 73-76, 2006.
4. W. R. Deal, R. Tsai, M. D. Lange, J. B. Boos, B. R. Bennett, and A. Gutierrez, "A W-band InAs/AlSb Low-Noise/Low-Power Amplifier," IEEE Microwave and Wireless Components Lett., Vol. 15, pp. 208-210, 2005.
5. W. R. Deal. R. Tsai, M. Lange, J. B. Boos, B. R. Bennett, R. Grundbacher, L. J. Lee, K. Padmanabhan, P. H. Liu, C. Namba, P. Nam, and A. Gutierrez, "A 110 GHz AlSb/InAs MMIC Amplifier," the Technical Digest of GaAs IC Symposium, pp. 301-304, 2004.
6. B. R. Bennett, R. Magno, J. B. Boos, W. Kruppa, and M. G. Ancona , "Antimonide-based Compound Semiconductors for Electronic Devices: A Review," Solid-State Electronics, Vol. 49, pp. 1875-1895, 2005.
7. B. P. Tinkham, B. R. Bennett, R. Magno, B. V. Shanabrook, and J. B. Boos, "Growth of InAsSb-Channel High Eectron Mobility Transistors Structures", J. Vac. Sci. Technol. Vol. B23, pp. 1441-1444, 2005.
8. B. R. Bennett, J. B. Boos, M. G. Ancona, N. A. Papanicolaou, G. A. Cooke, and H. Kheyrandish, "InAlSb/InAs/AlGaSb Quantum Well Heterostructure for High-Electron-Mobility Transistors", Journal of Electronic Materials. Vol. 36, pp. 99-104, 2007.
9. N. A. Papanicolaou, B. R. Bennett, J. B. Boos, D. Park and R. Bass, "Sb-based HEMTS with InAlSb/InAs Heterojunction", Electronics Letters. Vol. 41, No. 19, 2005, pp. 1088-1089.
10. S. Datta, T. Ashley, J. Brask, L. Buckle, M. Doczy, M. Emeny, D. Hayes, K. Hilton, R. Jefferies, T. Martin, T. J. Philips, D. Walls, P. Wilding, and R. Chau, "85 nm Gate Length Enhancement and Depletion mode INSb Quantum Well Transistors for Ultra High Speed and Very Low Power Digital Logic Applications," the Technical Digest of International Electron Device Meeting, 2005, pp. 763-766.
11. Y. C. Chou, J. M. Yang, C. H. Lin, J. Lee, M. Lange, R. Tsai, P. Nam, M. Nishimoto, A. Gutierrez, H. Quach, R. Lai, D. Farkas, M. Wojtowicz, P. Chin, M. Barsky, and A. Oki, J. B. Boos, and B. R. Bennett, "Manufacturable and Reliable 0.1 μm AlSb/InAs HEMT MMIC Technology for Ultra-Low Power Applications", the Technical Digest of IEEE IMS Symposium, 2007.