RF and DC characteristics of low-leakage InAs/AlSb HFETs

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 409-413

  Brar, B ^a   Nagy, G ^a   Bergman, J ^a   Sullivan, G ^a   Rowell, P ^a   Lin, H K ^b   Dahlstrom, M ^b   Kadow, C ^b   Rodwell, M ^b  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ENERGY GAP; SEMICONDUCTING INDIUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

DRAIN CURRENTS;

FIELD EFFECT TRANSISTORS;

EID: 0242270724     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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3. M. Thomas, H.-R. Blank, K.C. Wong and H. Kroemer, Journal of Crystal Growth, 175/76, 894 (1997)
4. B. Brar and H. Kroemer, J. Appl. Phys., 83, 894, (1998).
5. B. Brar and H. Kroemer, IEEE Electron Device Lett., 16, 548 (1995).