Low-frequency noise characteristics of AlSb/InAsSb HEMTs as a function of temperature and illumination

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Volumn , Issue , 2003, Pages 194-195

  Kruppa, W ^a   Boos, J B ^a   Bennett, B R ^a   Tinkham, B P ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

CARRIER VELOCITY; LOW BIAS VOLTAGE; LOW-FREQUENCY NOISE CHARACTERISTICS; MATERIAL SYSTEMS; MILLIMETER-WAVE APPLICATIONS; VERY LOW VOLTAGE;

MILLIMETER WAVES;

EID: 3142770664     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2003.1272057     Document Type: Conference Paper

References (3)

1. J. B. Boos, W. Kruppa, B. R. Bennett, D. Park, S. W. Kirchoefer, R. Bass and H. B. Dietrich, "AlSb/lnAs HEMTs for low-voltage, high-speed applications", IEEE Trans. Electron Devices, vol. 45, no. 9, pp. 1869-1875, Sept. 1998.
2. J. B. Boos, M. J. Yang, B. R, Bennett, D. Park, W. Kruppa, and R. Bass, "Low-voltage, high-speed AlSb/InAsSb HEMTs, " Electronics Letters, vol. 35, no. 10, pp. 847-848, May 13, 1999.
3. W. Kruppa, J. B. Boos, B. R. Bennett, and M. J. Yang, "Low-frequency noise in AlSb/InAs HEMTs, " Electronics Letters, vol. 36, no. 22, pp. 1888-1889, Oct. 26, 2000.