AlSb/InAs HEMTs with a TiW/Au gate metalization

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 460-463

  Boos, J B ^a   Bennett, B R ^a   Kruppa, W ^a   Park, D ^a   Mittereder, J ^a   Turner, N H ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HEAT TREATMENT; LEAKAGE CURRENTS; METALLIZING; PLASMA APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE TREATMENT; THERMODYNAMIC STABILITY;

GATE METALIZATION; METAL EVAPORATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034847706     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. 0.1 μm AlSb/InAs HEMTs with InAs subchannel
2. Ohmic contacts in AlSb/InAs high electron mobility transistors for low-voltage operation
3. Modeling of ultra-low-power AlSb/InAs HEMT-RITD circuits
4. Hole transport across the (Al,Ga)(As,Sb) barrier in InAs-(Al,Ga)(As,Sb) heterostructures
5. Observation of electrically resettable negative persistent photoconductivity in InAs/AlSb single quantum wells
6. Al(As,Sb) heterobarriers on InAs: Growth, structural properties and electrical transport
7. High temperature stable metal-GaAs contacts