Low-voltage, high-performance InAs/AlSb HEMTs with power gain above 100 GHz at 100 mV drain bias

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 243-244

  Bergman, Joshua ^a   Nagy, Gabor ^a   Sullivan, Gerard ^a   Ikhlassi, Amal ^a   Brar, Berinder ^a   Kadow, Christoph ^b   Lin, Heng Kuang ^b   Gossard, Art ^b   Rodwell, Mark ^b  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN BIAS; ELECTRON VELOCITY; ON-WAFER CALIBRATION; POWER GAIN;

CAPACITANCE; CARRIER MOBILITY; CURRENT DENSITY; ELECTRIC INSULATION; ELECTRON BEAM LITHOGRAPHY; IONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 13344295182     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2004.1367888     Document Type: Conference Paper

References (3)

1. J. B. Boos et al., JVST-B, vol. 17, pp. 1022-1027, 1999.
2. R. Tsai et al., Technical Digest of 2003 GaAs IC Symposium, pp. 294-297, 2003.
3. Y. Royter et al., Proc. Int. Electron Devices Meeting, pp. 30.7.1-30.7.4, 2003.