Low-frequency noise in AlSb/InAs and AlSb/InAsSb HEMTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 569-572

  Kruppa, W ^a   Boos, J B ^a   Bennett, B R ^a   Yang, M J ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ANTIMONIDE; INDIUM ARSENIDE; INDIUM ARSENIDE ANTIMONIDE;

ELECTRIC FIELD EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; VOLTAGE MEASUREMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033686855     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)

1. J. B. Boos, M. J. Yang, B. R. Bennett, D. Park, W. Kruppa, C. H. Yang, and R. Bass, "0.1 μm AlSbhAs HEMTs with InAs subchannel," Electronics Letters, 34(15), July 23, 1998.
2. J. B. Boos, B. R. Bennett, W. Kruppa, D. Park, J. Mittereder, R. Bass, and M. E. Twigg, "Ohmic contacts in AlSb/InAs high electron mobility transistors for low-voltage operation," J. Vac. Sci. Technol. B 17(3), May/June 1999.
3. J. B. Boos, M. J. Yang, B. R. Bennett, D. Park, W. Kruppa, and R. Bass, "Low-voltage, high-speed AISbhAsSb HEMTs," Electronics Letters, 35(10), May 13, 1999.
4. x/AlSb single quantum wells: Transition from type-II to type-I band alignment," J. of Appl. Phys., 87, June 1, 2000.