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Volumn , Issue , 2006, Pages 2051-2054

A low power/low noise MMIC amplifier for phased-array applications using InAs/AlSb HEMT

Author keywords

ABCS; Coplanar waveguide; HEMT; Low noise amplifier; MMIC

Indexed keywords

METAMORPHIC HEMT TECHNOLOGY; PHASED-ARRAY APPLICATIONS;

EID: 34250339321     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249858     Document Type: Conference Paper
Times cited : (20)

References (7)
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    • R. Tsai, R. Grundbacher, M. Lange, J.B. Boos, B.R. Bennett, P. Nam, L.J. Lee, M. Barsky, C. Namba, K. Padmanabhan, S. Sarkozy, P.H. Liu and A. Gutierrez, "Manufacturable AlSb/InAs HEMT technology for ultra-low power millimeter-wave integrated circuits," Proceedings of Mantech Conference, pp 4.4, 2004
  • 2
    • 0029777958 scopus 로고    scopus 로고
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    • Feb
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    • Fiedler, S.1    Preiss, B.2
  • 3
    • 28044442967 scopus 로고    scopus 로고
    • Antimonide-based compound semiconductors for electronic devices
    • B.R. Bennett, R. Magno, J.B. Boos, W. Kruppa, and M.G. Ancona, "Antimonide-based compound semiconductors for electronic devices," Solid State Electronics, vol. 49, no. 12, pp. 1875-1895, 2005.
    • (2005) Solid State Electronics , vol.49 , Issue.12 , pp. 1875-1895
    • Bennett, B.R.1    Magno, R.2    Boos, J.B.3    Kruppa, W.4    Ancona, M.G.5
  • 4
    • 0025516610 scopus 로고
    • An InAs channel heterojunction field-effect transistor with high transconductance
    • K. Yoh, T. Moriuchi and M. Inque, "An InAs channel heterojunction field-effect transistor with high transconductance," IEEE Electron Device Letters, vol. 11, no. 11, pp. 526-528, 1990
    • (1990) IEEE Electron Device Letters , vol.11 , Issue.11 , pp. 526-528
    • Yoh, K.1    Moriuchi, T.2    Inque, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.