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Volumn , Issue , 1996, Pages 458-461
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Traps and the kink effect in AlSb/InAs HEMTs
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
GATE LENGTH EFFECTS;
KINK EFFECT;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 0029709449
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (5)
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References (5)
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