InAs/AlSb HEMT and its application to ultra-low-power wideband high-gain low-noise amplifiers

IEEE Transactions on Microwave Theory and Techniques

Volumn 54, Issue 12, 2006, Pages 4448-4454

  Ma, Bob Yintat ^a,b   Bergman, Joshua ^a,b   Chen, Peter ^b   Hacker, Jonathan B ^a,b   Sullivan, Gerard ^b   Nagy, Gabor ^b   Brar, Bobby ^a,b  

^a IEEE   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

Antimonide based compound semiconductor (ABCS) high electron mobility transistor (HEMT); InAs AlSb heterostructure field effect transistor (HFET); Low power; Low noise amplifier (LNA); Monolithic microwave integrated circuit (MMIC); Ultra wideband

Indexed keywords

ANTIMONIDE BASED COMPOUND SEMICONDUCTORS (ABCS); DC POWER DISSIPATION; GAIN BANDWIDTH; ULTRA WIDEBAND;

BROADBAND NETWORKS; ENERGY DISSIPATION; HETEROJUNCTIONS; INDIUM ARSENIDE; LOW NOISE AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33847724774     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2006.883604     Document Type: Article

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