Manufacturable and reliable 0.1 μm AlSb/InAs HEMT MMIC technology for ultra-low power applications

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 461-464

  Chou, Yeong Chang ^a   Yang, Jeffrey M ^a   Lin, Chun H ^a   Lee, Jane ^a   Lange, M ^a   Tsai, R ^a   Nam, Peter ^a   Nishimoto, M ^a   Gutierrez, Augusto ^a   Quach, Helen ^a   Lai, Richard ^a   Farkas, D ^a   Wojtowicz, M ^a   Chin, Patrick ^a   Barsky, Mike ^a   Oki, Aaron ^a   Boos, J Brad ^b   Bennett, Brian R ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

HEMT; Low noise amplifier; MMIC

Indexed keywords

ENERGY DISSIPATION; HIGH ELECTRON MOBILITY TRANSISTORS; LOW NOISE AMPLIFIERS; MILITARY APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SPACE APPLICATIONS;

ULTRA-LOW POWER APPLICATIONS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 34748868523     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380488     Document Type: Conference Paper

References (9)

1. J.B. Boo, W. Kruppa, B. R. Bennett, D. Park, S. W. Kirchoefer, R. Bass, and H. B. Dietrich, "AlSb/InAs HEMTs for LowVoltage, High-Speed Applications", IEEE Trans. Electron Device, Vol. 45, pp. 1869-1875, 1998.
2. R. Tsai, R. Grundbacher, M. Lange, J. B. Boos, B. R. Bennett, P. Nam, M. Barsky, C. Namba, K. Padmanabhan, S. Sarkozy, P. H. Liu, and A. Gutierrez, "Manufacturable AlSb/InAs HEMT Technology for Ultra-Low Power Millimeter-Wave Integrated Circuits", the Technical Digest of GaAs Mantech Symposium, 2004.
3. B. Y. Ma, J. B. Hacker, J. Bergman, P. Chen, G. Sullivan, G. Nagy, and B. Brar, "Ultra-Low-Power Wideband High Gain InAs/AlSb HEMT Low Noise Amplifiers", the Technical Digest of IEEE IMS Symposium, pp. 73-76, 2006.
4. W. R. Deal, R. Tsai, M. D. Lange, J. B. Boos, B. R. Bennett, and A. Gutierrez, "A W-band InAs/AlSb Low-Noise/LowPower Amplifier," IEEE Microwave and Wireless Components Lett., Vol. 15, pp. 208-210, 2005.
5. P. Nam, R. Tsai, M. Lange, W. deal, J. Lee, C. Namba, P. Liu, R. Grundbacher, J. Wang, M. Barsky, A. Gutierrez-Aitken, and S. Olson, "Shallow Mesa Isolation of AlSb/InAs HEMT with AlGaSb Buffer Layer Using Inductively Coupled Plasma Etching", the Technical Digest of GaAs Mantech Symposium, 2003.
6. W. R. Deal. R. Tsai, M. Lange, J. B. Boos, B. R. Bennett, R. Grundbacher, L. J. Lee, K. Padmanabhan, P. H. Liu, C. Namba, P. Nam, and A. Gutierrez, "A 110 GHz AlSb/InAs MMIC Amplifier", the Technical Digest of GaAs IC Symposium, pp. 301-304, 2004.
7. R. Tsai, M. Barsky, J. B. Boos, B. R. Bennett, J. Lee, N. A. Papanicolaou, R. Magno, C. Namba, P. H. Liu, D. Park, R. Grundbacher, and A. Gutierrez, "Metamorphic AlSb/InAs HEMT for Low-Power, High-Speed Electronics," the Technical Digest Of Ga As IC Symposium, pp. 294-296, 2003.
8. R. Tsai, M. Barsky, J. Lee, J. B. Boos, B. R. Bennett, R. Magno, C. Namba, P. H. Liu, A. Gutierrez, and R. Lai, "MMIC compatible AlSb/InAs HEMT with Stable AlGaSb Buffer Layers", the Technical Digest of IEEE Lester Eastman Conference on High Performance Devices, pp. 276-279, 2002.
9. Y. C. Chou, D. Leung, R. Grundbacher, R. Lai, M. Barsky, Q. Kan, D. Eng, M. Wojtowicz, T. Block, S. Olson, P. H. Liu, A. Oki, and D. Streit, "0.1 pjn InGaAs/InAlAs/InP HEMT MMICs - a flight-qualified Technology", the Technical Digest of GaAs IC Symposium, pp. 77-80, 2002.