A W-Band InAs/AlSb low-noise/low-power amplifier

IEEE Microwave and Wireless Components Letters

Volumn 15, Issue 4, 2005, Pages 208-210

  Deal, William R ^a   Tsai, Roger ^a   Lange, Michael D ^a   Boos, J Brad ^b   Bennett, Brian R ^b   Gutierrez, Augusto ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Antimonide based compound semiconductor (ABCS); Grounded coplanar waveguide (GCPW); Low noise amplifier (LNA); Millimeter wave imaging

Indexed keywords

MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTIMIZATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SPURIOUS SIGNAL NOISE; SUBSTRATES; WAVEGUIDES;

ANTIMONIDE-BASED COMPOUND SEMICONDUCTORS (ABCS); GROUNDED COPLANAR WAVEGUIDES (GCPW); LOW NOISE AMPLIFIER (LNA); MILLIMETER-WAVE IMAGING;

AMPLIFIERS (ELECTRONIC);

EID: 18144396235     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2005.845691     Document Type: Article

References (9)

1. R. Tsai, R. Grundbacher, M. Lange, J. B. Boos, B. R. Bennett, P. Nam, L. J. Lee, M. Barsky, C. Namba, K. Padmanabhan, S. Sarkozy, P. H. Liu, and A. Gutierrez, "Manufacturable AlSb/InAs HEMT technology for ultra-low power millimeter-wave integrated circuits," in Proc. Mantech Conf., 2004, pp. 69-72.
2. S. Fiedler and B. Preiss, "Geosynchronous space based radar concept development for theater surveillance," in Proc. IEEE Aerospace Applications Conf., vol. 4, Feb. 1996, pp. 77-90.
3. G. S. Dow, D. C. W. Lo, Y. Guo, E. W. Lin, T. T. Chung, M. D. Biedenbender, O. Miromontes, A. Marashi, L. Yujiri, P. S. C. Lee, M. M. Soucri, and B. R. Allen, "Large scale W-band focal plane array for passive radiometric imaging," in IEEE MTT-S Dig., 1996, pp. 369-373.
4. G. S. Dow, T. N. Ton, H. Wang, D. C. W. Lo, W. Lam, B. Allen, K. Tan, and J. Berenz, "W-Band MMIC direct detection receiver for passive imaging systems," in IEEE MTT-S Dig., 1993, pp. 163-166.
5. J. B. Boos, W. Kruppa, B. R. Bennett, D. Park, S. W. Kirchoefer, R. Bass, and H. B. Dietrich, "AlSb/InAs HEMTs for low-voltage high-speed applications," IEEE Trans. Electron Devices, vol. 45, no. 9, pp. 1869-1875, Sep. 1998.
6. K. Yoh, T. Moriuchi, and M. Inque, "An InAs channel heterojunction field-effect transistor with high transconductance," IEEE Electron Device Lett., vol. 11, no. 11, pp. 526-528, Nov. 1990.
7. C. R. Bolognesi, "Antimonide-based high-speed electronics: A transistor perspective," in Proc. Indium Phosphide Related Materials Conf., 2002, pp. 55-58.
8. R. Tsai, M. Barsky, J. B. Boos, B. R. Bennett, J. Lee, N. A. Papanicolaou, R. Magno, C. Namba, P. H. Liu, D. Park, R. Grundbacher, and A. Gutierrez, "Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics," in Gallium Arsenide Integrated Circuit Symp. Technical Dig., 2003, pp. 294-277.
9. J. B. Hacker, J. Bergman, G. Nagby, G. Sullivan, C. Kadow, H. K. Lin, A. C. Gossard, M. Rodwell, and B. Brar, "An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier," IEEE Microw. Wireless Compon. Lett., vol. 14, no. 4, pp. 156-158, Apr. 2004.