Ultra-low-power wideband high gain InAs/AlSb HEMT low-noise amplifiers

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2006, Pages 73-76

  Ma, Bob Yintat ^a,b   Hacker, Jonathan B ^a,b   Bergman, Joshua ^a,b   Chen, Peter ^b   Sullivan, Gerard ^b   Nagy, Gabor ^b   Brar, B ^a,b  

^a IEEE   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

Antimonide based compound semiconductor (ABCS) HEMT; InAs AlSb HFET; LNA; Low nuise amplifier; Low power; MMIC; Ultra wideband

Indexed keywords

ANTIMONIDE-BASED COMPOUND SEMICONDUCTOR (ABCS) HEMT; INAS/ALSB HFET; LOW NUISE AMPLIFIER; LOW POWER; ULTRA WIDEBAND;

ALUMINUM ALLOYS; BROADBAND AMPLIFIERS; ENERGY DISSIPATION; HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM ALLOYS; MICROSTRIP DEVICES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 34250310867     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249931     Document Type: Conference Paper

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