Dc characteristics of InAs/AlSb HEMTs at cryogenic temperature

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2009, Pages 323-325

  Moschetti, G ^a   Nilsson, P A ^a   Wadefalk, N ^a   Malmkvist, M ^a   Lefebvre, E ^a   Grahn, J ^a   Roelens, Y ^b   Noudeviwa, A ^b   Olivier, A ^b   Bollaert, S ^b   Danneville, F ^b   Desplanque, L ^b   Wallart, X ^b   Dambrine, G ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENIC TEMPERATURES; DC CHARACTERISTICS; DC PERFORMANCE; GATE-LENGTH; ON-RESISTANCE; OUTPUT CONDUCTANCE; SOURCE-DRAIN;

DIELECTRIC RELAXATION; HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM; INDIUM PHOSPHIDE;

CRYOGENICS;

EID: 70349511801     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2009.5012506     Document Type: Conference Paper

References (4)

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2. W. Kruppa and J.B. Boos, " Low-temperature characteristics of 0.35?m AlSb/InAs HEMTs", IEEE Electronic Letters Vol. 30, 1994, pp 1358.
3. Yeong-Chang Chou, Yang J.M., Lin C.H., Lee J., Lange M., Tsai R., Nam P., Nishimoto M., Gutierrez A., Quach H., Lai R., Farkas D., Wojtowicz M., Chin P., Barsky M., Oki A., Boos J.B., Bennett B.R., " Manufacturable and Reliable 0.1 μm AlSb/InAs HEMT MMIC Technology for Ultra-Low Power Applications, " Microwave Symposium, 2007. IEEE/MTT-S International, pp.461-464, 3-8 June 2007.
4. I. Watanabe, K. Shinohara, T. Kitada, S. Shimomura, A. Endoh, Y. Yamashita, T. Mimura, S. Hiyamizu, T. Matsui, " Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs on (4 1 1)A-oriented substrates by MBE", Journal of Crystal Growth, 14th International Conference on Molecular Beam Epitaxy - MBE XIV, April 2007, Volumes 301- 302, Page 1025-1029.